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SSM6N57NU Datasheet, Toshiba Semiconductor

SSM6N57NU mosfet equivalent, n-channel mosfet.

SSM6N57NU Avg. rating / M : 1.0 rating-13

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SSM6N57NU Datasheet

Features and benefits

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS.

Application


* Power Management Switches
* DC-DC Converters 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on.

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SSM6N57NU Page 1 SSM6N57NU Page 2 SSM6N57NU Page 3

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